活動資訊
活動名稱
Prof.John Robertson專題講座:Towards reliable gate stacks on Ge and III-Vs channels活動內容
There are a number of proposals about how to deposit gate stacks with a fairly low density of interface traps, based
on different ideas.
Some of these use Al2O3 layers as a component of the gate stack.
Some of this is based on the idea that TMA inserts into As-As dimer bonds on the surface, and/or that Al2O3 is a diffusion barrier to sub-surface oxidation of the III-V or to degradation on the Ge/GeO2 interface. But IMEC have noted that Al2O3 leads to lower reliability due to the energy defect spectrum of the Al2O3. Ways around this based on DFT calculations are presented.活動類別
講座 (適用非公務人員)終身學習類別
專業技術/電機工程/電子工程(69)活動網址
活動限制
本活動限制一個人可報名 1 個場次