活動名稱Prof.John Robertson專題講座:Towards reliable gate stacks on Ge and III-Vs channels
活動內容There are a number of proposals about how to deposit gate stacks with a fairly low density of interface traps, based
on different ideas.
Some of these use Al2O3 layers as a component of the gate stack.
Some of this is based on the idea that TMA inserts into As-As dimer bonds on the surface, and/or that Al2O3 is a diffusion barrier to sub-surface oxidation of the III-V or to degradation on the Ge/GeO2 interface. But IMEC have noted that Al2O3 leads to lower reliability due to the energy defect spectrum of the Al2O3. Ways around this based on DFT calculations are presented.
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