活動名稱
Prof.John Robertson專題講座:Towards reliable gate stacks on Ge and III-Vs channels
場次名稱
台積電中心專題講座:Towards reliable gate stacks on Ge and III-Vs channels (by Prof. John Robertson)
場次內容
There are a number of proposals about how to deposit gate stacks with a fairly low density of interface traps, based
on different ideas.
Some of these use Al2O3 layers as a component of the gate stack.
Some of this is based on the idea that TMA inserts into As-As dimer bonds on the surface, and/or that Al2O3 is a diffusion barrier to sub-surface oxidation of the III-V or to degradation on the Ge/GeO2 interface. But IMEC have noted that Al2O3 leads to lower reliability due to the energy defect spectrum of the Al2O3. Ways around this based on DFT calculations are presented.
授課人
Prof. John Robertson
活動地點
電機二館 142室
場次時間
2015-11-03 14:00:00 ~ 15:30:00
報名時間
2015-10-21 00:00:00 ~ 2015-11-02 23:00:00
承辦單位
台積電-臺灣大學聯合研發中心
承辦人
姚思帆; 02-33661796; yaosf1023@ntu.edu.tw
報名類型
自由報名
參加對象
不限
其他限制條件
無
報名費
免費
人數名額
70 人
尚餘名額
22 人
用餐
不提供
是否提供公務人員學習時數
否
研習總時數
0 小時
學習類別
實體學習
學位學分
無
期別
0
活動縣市
10.臺北市
附件
備註
無